Evaluation of sneak path current in self-rectifying memristor crossbar

Abstract

Memristor is a non-volatile memory nanodevice which requires lower energy to operate. Besides, memristor is fast yet stable, thus making it attractive in the computing field and competitive as alternative candidate for the integration of high-density memory. While acting as a memory cell in a crossbar array circuit, there is limitation related to undesired sneak path current. Utilizing a self-rectifying memristor is reported to minimize the effect of the sneak path issue. Since there is lack of resources on research of implementing self-rectifying memristor in crossbar array structure, it is the focus of this project. The objective of this project is to model and simulate self-rectifying memristor with different rectification ratio and non-linearity. Their effect on the performance of memristor in crossbar array structure is then analyzed. Several types of self-rectifying memristor are reviewed and their compact SPICE models are generated. The memristor SPICE model is used to build a crossbar array circuit and run simulation through LTSPICE software. Moreover, comparison between Knowm memristor and self-rectifying memristor is done by observing their current-voltage relationship. The reduction of sneak path current by using different value of saturation current in self-rectifying memristor is evaluated and the effect of rectification ratio and non-linearity is being studied. Based on the simulation result, low saturation current helps to ensure large rectification ratio and non-linearity to lower sneak path current in the circuit. In short, self-rectifying memristor is able to effectively suppress sneak path current in crossbar array.