A'ain, Abu Khari and Huang, Min Zee and Kordesch, Albert Victor (2007) Two stage integrated class-F RF power amplifier. In: International Symposium on Integrated Circuits ISIC '07. Institute of Electrical and Electronics Engineering (IEEE), pp. 108-110. ISBN 978-1-4244-0797-2
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Official URL: http://dx.doi.org/10.1109/ISICIR.2007.4441808
Abstract
A new design of an integrated two-stage class-F power amplifier (PA) for wireless application operating in the 1.65 GHz frequency range is described. The circuit utilizes a simple method to drive the output stage with a half sinusoidal waveform that is optimal for class-F operation. The circuit was fabricated in a Silterra's standard 0.18 mum RF CMOS technology. Measurement result shows a maximum power-added efficiency (PAE) of 42% and a maximum gain of 19.7 dB. When operating from a 3 V voltage supply, the PA delivers an output power of 18.9 dBm. This work demonstrates the feasibility of using class-F PAs for short-range and low-power applications.
| Item Type: | Book Section |
|---|---|
| Uncontrolled Keywords: | RF CMOS technology, RF power amplifier, Silterra standard, power-added efficiency |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 9605 |
| Deposited By: | Salasiah M Said |
| Deposited On: | 06 Jan 2010 07:57 |
| Last Modified: | 03 Sep 2017 09:52 |
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