Actively quenched SPAD with improved amplification using deep submicron CMOS technology

Abstract

In general, a novel active quenching circuit for a single photon avalanche diode (SPAD) is invented to optimize the light detection and ranging (LiDAR) application, where the modulating performance is subject to specific demands. The LiDAR application favors the incredible and accurate frequency range and flexibility in a wide variety of terrains. The SPAD operates in Geiger mode operation whereby the presence of the photon detection is captured when excess bias voltage is operating above its breakdown voltage. In previous thesis, a passively quenched circuit (PQC) integrated with SPAD employing submicron of 130 nm complementary metal-oxide- semiconductor (CMOS) technology could only operate at a maximum frequency of 1 GHz. To address the limitations of PQC SPAD design, an actively quenched of active quenching circuit (AQC) and active recharge circuit (ARC) integrated with SPAD is proposed in this theses by improving better and excellent amplification strategy based on submicron of 130 nm and 250 nm CMOS technology. The drive of this project is to improve frequency up to 2 GHz operating at low-voltage excess biased and investigate the effects of both passively and actively quenched SPAD. To determine the power dissipation for each quenching design, the drain current is computed. The performance of the proposed solutions are characterized in terms of recovery time, tr and quenching time, tq through the resultant waveform of quenching pulse simulation waveforms that yields to dead time, td performance. In this project, the functioning of a basic PQC associated with SPAD is re-constructed first using Cadence Design System and LTSpice XVII tools. Then, followed by the development of the suggested design of AQC and ARC integrated with SPAD using LTSpice XVII tool. The amplification scheme of Geiger mode for photon detection is successfully optimized by achieving maximum of 2 GHz from 0.5 GHz using LTSpic XVII tool.