Chuan, M. W. and Wong, K. L. and Hamzah, A. and Rusli, S. and Alias, N. E. and Lim, C. S. and Tan, M. L. P. (2020) Device performance of silicene nanoribbon field-effect transistor under ballistic transport. In: 2020 IEEE International Conference on Semiconductor Electronics (ICSE), 28-29 July 2020, Kuala Lumpur, Malaysia.
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Official URL: http://www.dx.doi.org/10.1109/ICSE49846.2020.91668...
Abstract
Ballistic device performance of monolayer silicene nanoribbon (SiNR) field-effect transistors (FETs) is investigated in this paper. The electronic band structure of SiNR is calculated within the nearest neighbour tight-binding approximation. The top of the barrier ballistic transistor model is employed to compute the current-voltage characteristics of SiNR FETs. This theoretical model shows that the SiNR FET can achieve on-to-off current ratio up to 105, subthreshold swing of 65.12 mV/dec, and drain-induced barrier lowering of 44.44mV/V. The relationship between the drain current and the oxide thickness is also discussed. The findings show that silicene is suitable for future nanoelectronic applications.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | ballistic transistor model, Moore’s Law, monolayer silicene nanoribbon |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 94020 |
| Deposited By: | Narimah Nawil |
| Deposited On: | 28 Feb 2022 13:17 |
| Last Modified: | 28 Feb 2022 13:17 |
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