Saad, Ismail and Ismail, Razali (2006) Design and simulation of 50 nm vertical double-gate MOSFET (VDGM). In: Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference, 29 Oct 2006-1 Dec 2006, Kuala Lumpur, Malaysia.
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Official URL: http://dx.doi.org/10.1109/SMELEC.2006.380691
The paper demonstrate the design and simulation study of 2D vertical double- gate MOSFET (VDGM) with an excellent short channel effect (SCE) characteristics. With the gate length of 50 nm, body doping of 3.5 times 1018 cm-3 and oxide thickness, TOX = 2.5 nm, a good drive current ION of 7 muA/mum and a low off-state leakage current IOFF of 2 pA/mum was explicitly shown. Besides that, the subthreshold characteristics also highlighted a reasonably well-controlled SCE with subthreshold swing SubVT = 89 mV/decade and threshold voltage VT = 0.56 V. The analysis of body doping effects for SCE optimization and drive current trade-off was also done for an overall investigation and limit of the VDGM.
|Item Type:||Conference or Workshop Item (Paper)|
|Uncontrolled Keywords:||SCE optimization, body doping effects, drive current trade-off, leakage current, oxide thickness, short channel effect, size 50 nm, subthreshold swing, vertical double-gate MOSFET|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Norhafizah Hussin|
|Deposited On:||07 Jan 2009 00:13|
|Last Modified:||01 Jun 2010 15:52|
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