Universiti Teknologi Malaysia Institutional Repository

Design and simulation of 50 nm vertical double-gate MOSFET (VDGM)

Saad, Ismail and Ismail, Razali (2006) Design and simulation of 50 nm vertical double-gate MOSFET (VDGM). In: Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference, 29 Oct 2006-1 Dec 2006, Kuala Lumpur, Malaysia.

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Official URL: http://dx.doi.org/10.1109/SMELEC.2006.380691

Abstract

The paper demonstrate the design and simulation study of 2D vertical double- gate MOSFET (VDGM) with an excellent short channel effect (SCE) characteristics. With the gate length of 50 nm, body doping of 3.5 times 1018 cm-3 and oxide thickness, TOX = 2.5 nm, a good drive current ION of 7 muA/mum and a low off-state leakage current IOFF of 2 pA/mum was explicitly shown. Besides that, the subthreshold characteristics also highlighted a reasonably well-controlled SCE with subthreshold swing SubVT = 89 mV/decade and threshold voltage VT = 0.56 V. The analysis of body doping effects for SCE optimization and drive current trade-off was also done for an overall investigation and limit of the VDGM.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:SCE optimization, body doping effects, drive current trade-off, leakage current, oxide thickness, short channel effect, size 50 nm, subthreshold swing, vertical double-gate MOSFET
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:7497
Deposited By: Norhafizah Hussin
Deposited On:07 Jan 2009 00:13
Last Modified:01 Jun 2010 15:52

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