Ithnin, H. and Mat Isa, Ahmad Radzi and Kasmin, Mohd. Khalid and Saeed, M. A. (2012) Study of electrostatic potential surface around bipyramidal gaas quantum dot. Digest Journal of Nanomaterials and Biostructures, 7 (4). pp. 1787-1791. ISSN 1842-3582
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Official URL: http://chalcogen.ro/1787_Ithnin.pdf
Abstract
Semiconductor quantum dot have got scientific interest because of their unique electronic nature. In this article, an isolated square bipyramidal gallium arsenide (GaAs) quantum dot has been optimized using DFT method. The size of quantum dot was 1.2 nm2 (square base) and 1.7nm height and consisted of total 84 atoms. The quantum dot was optimized using hybrid B3LYP functional and SBKJC pseudo potential basis sets. The electrostatic potential surface around the optimized GaAs quantum dot was plotted and the result showed the potential on the pyramid surface was polarized with two positive and negative surfaces. This potential was due electronic and nuclear charge of different arrangement on the surface structure of the dot.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | electronic nature, GaAs quantum dot, pseudo potential |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Science |
| ID Code: | 47552 |
| Deposited By: | Narimah Nawil |
| Deposited On: | 22 Jun 2015 05:56 |
| Last Modified: | 25 Apr 2019 01:22 |
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