Universiti Teknologi Malaysia Institutional Repository

Graphene as a buffer layer for silicon carbide-on-insulator structures

Astuti, B. and Tanikawa, M. and Rahman, S. F. A. and Yasui, K. and Hashim, A. M. (2012) Graphene as a buffer layer for silicon carbide-on-insulator structures. Materials, 5 (11). pp. 2270-2279. ISSN 1996-1944


Official URL: https://www.mdpi.com/1996-1944/5/11/2270


We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI) structure by utilizing polycrystalline single layer graphene (SLG) as a buffer layer. The epitaxial growth was carried out using a hot-mesh chemical vapor deposition (HM-CVD) technique. Cubic SiC (3C-SiC) thin film in (111) domain was realized at relatively low substrate temperature of 750 °C. 3C-SiC energy bandgap of 2.2 eV was confirmed. The Si-O absorption band observed in the grown film can be caused by the out-diffusion of the oxygen atom from SiO2 substrate or oxygen doping during the cleaning process. Further experimental works by optimizing the cleaning process, growth parameters of the present growth method, or by using other growth methods, as well, are expected to realize a high quality SiCOI structure, thereby opening up the way for a breakthrough in the development of advanced ULSIs with multifunctionalities.

Item Type:Article
Uncontrolled Keywords:graphene, silicon carbide, insulator, buffer layer, hot-mesh CVD
Subjects:T Technology > TH Building construction
Divisions:Electrical Engineering
ID Code:47034
Deposited By: Fazli Masari
Deposited On:22 Jun 2015 05:56
Last Modified:14 Oct 2018 08:19

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