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Characterization of liquid-phase sensor utilizing gan-based two terminal devices

Zainal Abidin, Mastura Shafinaz and Wang, Soo Jeat and Hashim, Abdul Manaf and Abdul Rahman, Shaharin Fadzli and Sharifabad, Maneea Eizadi (2011) Characterization of liquid-phase sensor utilizing gan-based two terminal devices. AIP Conference Proceedings, 1341 . pp. 434-439. ISSN 0094-243X

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Abstract

GaN-based HEMT structures are versatile structures that may be used for a variety of sensing applications. Due to their low intrinsic carrier concentrations, wide band gap semiconductor sensors based on GaN can be operated at lower current levels than conventional Si-based devices and offer the capability of detection up to 600 °C [1–5]. The ability of electronic devices fabricated on these materials to operate in high temperature, high power and high flux/energy radiation conditions enable performance enhancements in a wide variety of spacecraft, satellite, homeland defense, mining, automobile, nuclear power, and radar applications.

Item Type:Article
Uncontrolled Keywords:liquid-phase sensor
Subjects:T Technology > TA Engineering (General). Civil engineering (General)
Divisions:Electrical Engineering
ID Code:44783
Deposited By: Haliza Zainal
Deposited On:21 Apr 2015 03:31
Last Modified:13 Sep 2017 03:53

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