Zainal Abidin, Mastura Shafinaz and Wang, Soo Jeat and Hashim, Abdul Manaf and Abdul Rahman, Shaharin Fadzli and Sharifabad, Maneea Eizadi (2011) Characterization of liquid-phase sensor utilizing gan-based two terminal devices. AIP Conference Proceedings, 1341 . pp. 434-439. ISSN 0094-243X
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Abstract
GaN-based HEMT structures are versatile structures that may be used for a variety of sensing applications. Due to their low intrinsic carrier concentrations, wide band gap semiconductor sensors based on GaN can be operated at lower current levels than conventional Si-based devices and offer the capability of detection up to 600 °C [1–5]. The ability of electronic devices fabricated on these materials to operate in high temperature, high power and high flux/energy radiation conditions enable performance enhancements in a wide variety of spacecraft, satellite, homeland defense, mining, automobile, nuclear power, and radar applications.
Item Type: | Article |
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Uncontrolled Keywords: | liquid-phase sensor |
Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
Divisions: | Electrical Engineering |
ID Code: | 44783 |
Deposited By: | Haliza Zainal |
Deposited On: | 21 Apr 2015 03:31 |
Last Modified: | 13 Sep 2017 03:53 |
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