Modeling and simulation of bilayer graphene nanoribbon field effect transistor

Abstract

The unique structure and electronic properties of Bilayer Graphene Nanoribbon (BLG) such as long mean free path, ballistic transport and symmetrical band structure, promise a new device application in the future. Improving the modeling of BLG Field Effect Transistor (FET) devices, based on the quantum confinement effect, is the primary objective of this research. It presents an analytical and numerical model for evaluating electrical properties of BLG devices in equilibrium (temperature is constant) and non-equilibrium states (for different temperatures). By developing the carrier statistic and carrier transport model, the current-voltage model of a BLG FET is established and evaluated. Using an analytical model, BLG carrier concentration and conductance in degenerate and nondegenerate limits are explored. The carrier mobility and drain current (as a mean parameter of FET characteristic) are also being investigated. This research also presents a numerical implementation of the developed model. These models provide one with the chance to perform simulation in a reasonable amount of time, which is required for large-scale applications of device optimisations. MATLAB software is used in the numerical methods which have been extensively applied for the study of BLG FET behaviour. Comparison study of conductance, mobility and currentvoltage with published experimental data is presented and good agreements with the proposed models are reported. The presented model can be used in Technology Computer Aided Design tools to improve the performance of next generation nanodevices.