Chuan, Mu Wen and Riyadi, Munawar Agus and Hamzah, Afiq and Alias, Nurul Ezaila and Mohamed Sultan, Suhana and Lim, Cheng Siong and Tan, Michael Loong Peng (2022) Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model. PLoS ONE, 17 (3). pp. 1-11. ISSN 1932-6203
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Official URL: http://dx.doi.org/10.1371/journal.pone.0264483
Abstract
Moore's Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than- Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed ptype silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work.
Item Type: | Article |
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Uncontrolled Keywords: | methodology, model, simulation |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Divisions: | Faculty of Engineering - School of Electrical |
ID Code: | 103651 |
Deposited By: | Yanti Mohd Shah |
Deposited On: | 22 Nov 2023 00:18 |
Last Modified: | 22 Nov 2023 00:18 |
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