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Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

Chuan, Mu Wen and Riyadi, Munawar Agus and Hamzah, Afiq and Alias, Nurul Ezaila and Mohamed Sultan, Suhana and Lim, Cheng Siong and Tan, Michael Loong Peng (2022) Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model. PLoS ONE, 17 (3). pp. 1-11. ISSN 1932-6203

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Official URL: http://dx.doi.org/10.1371/journal.pone.0264483

Abstract

Moore's Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than- Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed ptype silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work.

Item Type:Article
Uncontrolled Keywords:methodology, model, simulation
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Faculty of Engineering - School of Electrical
ID Code:103651
Deposited By: Yanti Mohd Shah
Deposited On:22 Nov 2023 00:18
Last Modified:22 Nov 2023 00:18

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