Affandi, S. Afidah and Alias, N. Ezaila and Hamzah, Afiq and Tan, M. L Peng and Hussin, Hanim (2022) Performance analysis of junctionless multi-bridge channel FET with strained SiGe application. In: 2022 IEEE International Conference on Semiconductor Electronics, ICSE 2022, 15 - 17 August 2022, Virtual, Kuala Lumpur.
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Official URL: http://dx.doi.org/10.1109/ICSE56004.2022.9863083
Abstract
In this work, a 12 nm 3-Dimensional (3D) strained Junctionless (JL) Multi-Bridge Channel Field Effect Transistor (MBCFET) with different Germanium (Ge) mole fractions from 0.1 to 0.4 are presented. The strain used in this work is Silicon-Germanium (SiGe) which is applied in between the channels of MBCFET. The electrical performances such as on-current, threshold voltage and potential distributions along the channel are conducted by using the Silvaco TCAD simulator. It was found that the strained JL MBCFET performs better compared to unstrained JL MBCFET. The results show that by inducing strain on JL MBCFET, the on-current increased by 29%, threshold voltage shifted by 0.25 V and potential in the centre of the channel was reduced by 13 %.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | 3D, Ge mole fractions, Junctionless, Multi-bridge channel FET, SiGe, Strained, TCAD |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 98626 |
| Deposited By: | Widya Wahid |
| Deposited On: | 25 Jan 2023 09:41 |
| Last Modified: | 25 Jan 2023 09:41 |
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