Analytical study of the electronic properties of boron nitride nanosheet

Abstract

The exploration of potential semiconducting materials for nanoelectronics and optoelectronics applications for post-silicon era has attracted significant attention from researchers. The two-dimensional (2D) boron nitride nanosheet (BNNS) is among the candidates due to its analogous structure and supreme properties with the graphene, and yet, retains several extraordinary characteristics especially in term of its stability. To provide more understandings of the BNNS, the analytical study is carried out based on the schematic structure of BNNS using the Nearest Neighbour Tight Binding (NNTB) model. Electronic properties such as the dispersion relation and the density of state (DOS) are modelled. Furthermore, the impacts of the on-site energy and the hopping integral to the band structure are also studied. The result shows that the on-site energy has a significant effect on the band gap while the hopping integral is accountable for the shape of the band structure. The model exhibits good agreement with the computational published results of the band gap 4.57-4.6eV.