Universiti Teknologi Malaysia Institutional Repository

Crystallized InBiS3 thin films with enhanced optoelectronic properties

Ali, N. and Hussain, Arshad and Ahmed, R. and Omar, M. Firdaus and Sultan, M. and Yong, Qing Fu (2018) Crystallized InBiS3 thin films with enhanced optoelectronic properties. Applied Surface Science, 436 (NA). pp. 293-301. ISSN 0169-4332

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Official URL: http://dx.doi.org/10.1016/j.apsusc.2017.11.273


In this paper, a one-step thermal evaporation approach was used for fabrication of indium bismuth sulphide thin films, and the synergetic effects of co-evaporation of two sources (indium granules and Bi2S3 powders) were investigated using different characterization techniques. X-ray diffraction (XRD) analysis confirmed the crystalline orthorhombic structure for the post-annealed samples. Surface roughness and crystal size of the obtained film samples were increased with increasing annealing temperatures. Analysis using X-ray photoelectron spectroscopy showed the formation of the InBiS3 structure for the obtained films, which is also confirmed by the XRD results. The optical absorption coefficient value of the annealed samples was found to be in the order of 105 cm−1 in the visible region of the solar spectrum. The optical band gap energy and electrical resistivity of the fabricated samples were observed to decrease (from 2.2 to 1.3 eV, and from 0.3 to 0.01 Ω–cm, respectively) with increasing annealing temperatures (from 200 to 350 °C), indicating the suitability of the prepared InBiS3 thin films for solar cell applications.

Item Type:Article
Uncontrolled Keywords:thin films, photovoltaics, optical properties, XRD, electrical properties
Subjects:Q Science > QC Physics
ID Code:97076
Deposited By: Yanti Mohd Shah
Deposited On:12 Sep 2022 15:50
Last Modified:12 Sep 2022 15:50

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