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The effect of MOSFET second-order nonlinearity on active inductor-based oscillators

A'ain, Abu Khari and Ler, Chun Lee and Kordesch, Albert Victor (2007) The effect of MOSFET second-order nonlinearity on active inductor-based oscillators. In: Proceedings of the Asia-Pacific Conference on Applied Electromagnetics (APACE 2007). Institute of Electrical and Electronics Engineering (IEEE), pp. 1-4. ISBN 978-1-4244-1434-5

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Official URL: http://dx.doi.org/10.1109/APACE.2007.4603974


Second-order nonlinearity of the MOSFET has significant impact on active inductor (AI) based oscillators, regardless of whether they are single-ended or differential. By using Taylor series expansion, this paper shows that second-order nonlinearity of the MOSFET will cause a shift in the DC biasing of an AI-based oscillator, depending on oscillation amplitude. The DC bias shift results in a change of the transistor transconductance and parasitic components from their original value, which will affect the oscillator resonance frequency. This explains why a small-signal S-parameter simulation is not sufficient to accurately predict the oscillation frequency and tuning range of AI-based oscillators, even at moderate oscillation amplitudes.

Item Type:Book Section
Uncontrolled Keywords:active inductor-based, MOSFET, second-order linearity, S-parameter simulation
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:9604
Deposited By: Salasiah M Said
Deposited On:06 Jan 2010 07:57
Last Modified:03 Sep 2017 09:51

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