A'ain, Abu Khari and Ler, Chun Lee and Kordesch, Albert Victor (2007) The effect of MOSFET second-order nonlinearity on active inductor-based oscillators. In: Proceedings of the Asia-Pacific Conference on Applied Electromagnetics (APACE 2007). Institute of Electrical and Electronics Engineering (IEEE), pp. 1-4. ISBN 978-1-4244-1434-5
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Official URL: http://dx.doi.org/10.1109/APACE.2007.4603974
Abstract
Second-order nonlinearity of the MOSFET has significant impact on active inductor (AI) based oscillators, regardless of whether they are single-ended or differential. By using Taylor series expansion, this paper shows that second-order nonlinearity of the MOSFET will cause a shift in the DC biasing of an AI-based oscillator, depending on oscillation amplitude. The DC bias shift results in a change of the transistor transconductance and parasitic components from their original value, which will affect the oscillator resonance frequency. This explains why a small-signal S-parameter simulation is not sufficient to accurately predict the oscillation frequency and tuning range of AI-based oscillators, even at moderate oscillation amplitudes.
Item Type: | Book Section |
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Uncontrolled Keywords: | active inductor-based, MOSFET, second-order linearity, S-parameter simulation |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Divisions: | Electrical Engineering |
ID Code: | 9604 |
Deposited By: | Salasiah M Said |
Deposited On: | 06 Jan 2010 07:57 |
Last Modified: | 03 Sep 2017 09:51 |
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