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Electronic properties of silicene nanoribbons using tight-binding approach

Chuan, M. W. and Wong, K. L. and Hamzah, A. and Alias, N. E. and Lim, C. S. and Tan, M. L. P. (2019) Electronic properties of silicene nanoribbons using tight-binding approach. Indonesian Journal of Electrical Engineering and Computer Science, 19 (1). pp. 77-84. ISSN 2502-4752


Official URL: https://dx.doi.org/10.11591/ijeecs.v19.i1.pp76-84


Silicene is envisaged as one of the two-dimensional (2D) materials for future nanoelectronic applications. In addition to its extraordinary electronic properties, it is predicted to be compatible with the silicon (Si) fabrication technology. By using nearest neighbour tight-binding (NNTB) approach, the electronic properties of zigzag silicene nanoribbons (ZSiNRs) with single vacancy (SV) defects are modelled and simulated. For 4-ZSiNR with L=2, the band structures and density of states (DOS) are computed based on SV incorporated ZSiNRs at varying defect locations. The results show that the SV defect will shift the band structure and increase the peak of DOS while the bandgap remain zero. This work provides a theoretical framework to understand the impact of SV defect which is an inevitable non-ideal effect during the fabrication of silicene nanoribbons (SiNRs).

Item Type:Article
Uncontrolled Keywords:silicene nanoribbons, tight-binding, vacancy defect
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:90053
Deposited By: Narimah Nawil
Deposited On:29 Mar 2021 13:57
Last Modified:29 Mar 2021 13:57

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