Universiti Teknologi Malaysia Institutional Repository

Humidity effect on electrical properties of graphene oxide back-to-back schottky diode

Rahman, S. F. A. and Salleh, N. A. and Abidin, M. S. Z. and Nawabjan, A. (2019) Humidity effect on electrical properties of graphene oxide back-to-back schottky diode. Telkomnika (Telecommunication Computing Electronics and Control), 17 (5). pp. 2427-2433. ISSN 1693-6930

[img]
Preview
PDF
501kB

Official URL: https://dx.doi.org/10.12928/telkomnika.v17i5.12800

Abstract

A Schottky diode-based sensor is a promising structure for high sensitive and low power sensor. This paper investigates a device called back-to-back Schottky diode (BBSD) for humidity sensing operation. The BBSD provides simpler device configuration that can be fabricated using less complicated process. The current-voltage characteristic of the fabricated BBSD was measured at different relative humidity. From the obtained characteristics, series resistance, barrier height and ideality factor was analyzed. The device current increased at higher humidity level. The current increase could be associated to the decrease in series resistance, barrier height and ideality factor. When humidity decreased from 11% to 97%, the barrier height showed reduction of 0.1 eV. The barrier height reduction was explained by considering electric field-induced reduction of graphene oxide. The observed result confirmed the device feasibility as promising simple and low cost humidity sensor.

Item Type:Article
Uncontrolled Keywords:back-to-back Schottky, graphene oxide, humidity sensor
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:89649
Deposited By: Narimah Nawil
Deposited On:22 Feb 2021 01:44
Last Modified:22 Feb 2021 01:44

Repository Staff Only: item control page