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A study of stoichiometric composition of Ge thermal oxide by X-ray photoelectron spectroscopic depth profiling

Anisuzzaman, Mohammad and Ab. Manaf, Norani and Saharudin, Suhairi and Yasui, Kanji and Hashim, Abdul Manaf (2019) A study of stoichiometric composition of Ge thermal oxide by X-ray photoelectron spectroscopic depth profiling. In: 2018 Nanotech Malaysia, 7 May 2018 through 9 May 2018, Universiti Teknologi Malaysia Kuala Lumpur, Malaysia.

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Official URL: http://dx.doi.org/10.1016/j.matpr.2018.12.052

Abstract

The evolution of different oxidation states during thermal oxidation of (100) oriented Ge substrate was investigated with X-ray photoelectron spectroscopic analysis. The thermally grown oxides in the temperature range of 380 to 500°C were found to consist of four different oxidation states of Ge, namely, Ge1+, Ge2+, Ge3+, and Ge4+. The fractional composition of the oxide species is seen to be dependent on oxidation temperature. Spectroscopic depth profiling reveals variation of oxide composition along the depth of the oxide layer with a large concentration of GeO2 near the oxide surface and a large concentration of suboxides near the oxide/Ge interface. The results obtained in the investigation will help in achieving greater insight into the thermal oxidation process of Ge.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:germanium, suboxide, thermal oxidation, XPS
Subjects:T Technology > TA Engineering (General). Civil engineering (General)
Divisions:Malaysia-Japan International Institute of Technology
ID Code:89647
Deposited By: Yanti Mohd Shah
Deposited On:22 Feb 2021 14:08
Last Modified:22 Feb 2021 14:08

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