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Solid-state limited nucleation of NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition

Alizadeh, Mahdi and Hamzan, Najwa and Ooi, Poh Choon and Omar, Muhammad Firdaus and Dee, Chang Fu and Goh, Boon Tong (2019) Solid-state limited nucleation of NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition. Materials, 12 (4). p. 674. ISSN 1996-1944


Official URL: http://dx.doi.org/10.3390/ma12040674


This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nanowires were structured by single crystalline NiSi and amorphous SiC as the cores and shells of the nanowires, respectively. It is proposed that the precipitation of the NiSi/SiC are followed according to the nucleation limited silicide reaction and the surface-migration respectively for these core-shell nanowires. The electrical performance of the grown NiSi/SiC core-shell nanowires was characterized by the conducting AFM and it is found that the measured conductivities of the nanowires were higher than the reported works that might be enhanced by SiC shell layer on NiSi nanowires. The high conductivity of NiSi/SiC core-shell nanowires could potentially improve the electrical performance of the nanowires-based devices for harsh environment applications such as field effect transistors, field emitters, space sensors, and electrochemical devices.

Item Type:Article
Uncontrolled Keywords:NiSi, SiC
Subjects:Q Science > QC Physics
ID Code:89543
Deposited By: Widya Wahid
Deposited On:22 Feb 2021 09:47
Last Modified:22 Feb 2021 09:47

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