Universiti Teknologi Malaysia Institutional Repository

Reliability of graphene as charge storage layer in floating gate flash memory

Ahmad, M. H. and Alias, N. E. and Hamzah, A. and Johari, Z. and Abidin, M. S. Z. and Paraman, N. and Ismail, R. (2019) Reliability of graphene as charge storage layer in floating gate flash memory. Indonesian Journal of Electrical Engineering and Informatics, 7 (2). pp. 331-337. ISSN 2089-3272

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Official URL: http://www.dx.doi.org/10.11591/ijeei.v7i2.1170


This study aims to investigate the memory performances of graphene as a charge storage layer in the floating gate with difference doping concentration of n-channel and p-channel substrates using Silvaco ATLAS TCAD Tools. The simulation work has been done to determine the performance of flash memory in terms of memory window, P/E characteristics and data retention and have been validated with the experimental work done by other researchers. From the simulation data, the trend of memory window at low P/E voltage is nearly overlapped between simulation and experimental data. The memory window at ±20V P/E voltage for n-channel and p-channel flash memory cell are 15.4V and 15.6V respectively. The data retention for the n-channel flash memory cell is retained by 75% (from 15.4V to 11.6V) whereas for the p-channel flash memory cell is retained by 80% (from 15.6V to 12.5V) after 10 years of extrapolation with-1/1V gate stress which shows that p-channel flash memory cell demonstrates better data retention compared to n-channel flash memory cell.

Item Type:Article
Uncontrolled Keywords:flash memory, graphene, memory window
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:88863
Deposited By: Narimah Nawil
Deposited On:29 Dec 2020 12:38
Last Modified:29 Dec 2020 12:38

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