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Modeling of lightly-doped drain and source contact with boron and nitrogen in graphene nanoribbon

Wong, Kien Liong and Tan, Beng Rui and Chuan, Mu Wen and Hamzah, Afiq and Rusli, Shahrizal and Alias, Nurul Ezaila and Mohamed Sultan, Suhana and Lim, Cheng Siong and Tan, Michael Loong Peng (2019) Modeling of lightly-doped drain and source contact with boron and nitrogen in graphene nanoribbon. Chinese Journal of Physics, 62 . pp. 258-273. ISSN 05779073

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Official URL: http://dx.doi.org/10.1016/j.cjph.2019.09.026


Graphene, a monolayer carbon atoms arranged in hexagonal honeycomb lattice possesses impressive electronic properties. It is utilized as channel, source and drain contact in graphene nanoribbon field-effect transistor (GNRFET). Zigzag graphene nanoribbon (ZGNR) is used as semi-metallic drain and source terminal to a pristine armchair graphene nanoribbon (AGNR) that acts as a semiconducting channel. In addition, a single dopant, either nitrogen or boron is added to create lightly-doped drain and source contact. The electronic properties of graphene nanoribbon (GNR) with lightly-doped drain and source contacts are obtained from tight-binding approach. With self-energy matrices, the lightly-doped contacts Hamiltonian matrices are combined with the pristine channel Hamiltonian matrix. The density of states (DOS) are simulated based on the non-equilibrium Green's Function (NEGF) formalism. Our findings are then compared with published research work. Furthermore, it is demonstrated that the DOS of the overall GNR structure still retain a small band gap and possess semiconducting properties when the channel is connected to semi-metallic contact at the drain and source terminal.

Item Type:Article
Uncontrolled Keywords:band structure, tight-binding
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:88407
Deposited By: Widya Wahid
Deposited On:15 Dec 2020 08:06
Last Modified:15 Dec 2020 08:06

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