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3D simulation investigating ZnO NWFET characteristics

Ditshego, Nonofo M. J. and Mohamed Sultan, Suhana (2019) 3D simulation investigating ZnO NWFET characteristics. Journal of Nano Research, 58 . pp. 40-48. ISSN 1661-9897


Official URL: http://dx.doi.org/10.4028/www.scientific.net/JNano...


3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm2 /Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the device output results are influenced by two main issues: (i) contact resistance (Rcon ≈ 11.3 MΩ) and (ii) interface state trapped charge number density (QIT = 3.79 x 1015 cm-2). The QIT was derived from the Gaussian distribution that depends on two parameters added together. These parameters are: an acceptor-like exponential band tail function gGA(E) and an acceptor-like Gaussian deep state function gTA(E). By de-embedding the contact resistance, the simulation is able to improve the device by producing excellent field effect mobility of 126.9 cm2 /Vs.

Item Type:Article
Uncontrolled Keywords:device de-embedding, field effect transistor, nanowire
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:87985
Deposited By: Yanti Mohd Shah
Deposited On:30 Nov 2020 21:44
Last Modified:30 Nov 2020 21:44

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