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Annealing temperature induced improved crystallinity of ysz thin film

Rusli, N. A. and Muhammad, R. and Ghoshal, S. K. and Nur, H. and Nayan, N. (2020) Annealing temperature induced improved crystallinity of ysz thin film. Materials Research Express, 7 (5). ISSN 2053-1591


Official URL: http://www.dx.doi.org/10.1088/2053-1591/ab9039


Six YSZ thin films (YSZTFs) were prepared at varied annealing temperature (380 °C to 600 °C) by radio frequency magnetron sputtering method. Glancing angle x-ray diffraction (GAXRD) pattern revealed the polycrystalline nature of all films with crystallite size in the range of 9 to 15 nm. Sample annealed at 400 °C displayed the lowest microstrain (0.262) and crystallinity (60%). FESEM images disclosed dense, homogeneous and crack free growth of annealed samples compared to as-deposited one. EDX spectra detected the right elemental compositions of films. AFM images showed growth evolution of YSZ grains with size range between 0.2 to 5 nm and improved films' surface roughness. HRTEM measurement of the studied YSZTFs exhibited lattice orientation and atomic structure of nucleated YSZ nanocrystallites. Furthermore, film annealed at 500 °C divulged less oriented structure because of dislocation.

Item Type:Article
Uncontrolled Keywords:microstrain, morphology, structural
Subjects:Q Science > QC Physics
ID Code:87557
Deposited By: Narimah Nawil
Deposited On:30 Nov 2020 17:03
Last Modified:30 Nov 2020 17:03

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