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Photophysical performance of radio frequency sputtered Pt/n-PSi/ZnO NCs/Pt photovoltaic photodetectors

Thahe, Asad A. and Bakhtiar, Hazri and Ali, Basant A. and Hassan, Z. and Bidin, Nroiah and Bououdina, Mohamed and Qaeed, M. A. and A. Talib, Zainal and Al-Azawi, Mohammed A. and Alqaraghuli, Hasan and Uday, M. B. and Ramizy, Asmiet and Al-Ghamdi, M. S. and Abubakar, Dauda and Allam, Nageh K. (2018) Photophysical performance of radio frequency sputtered Pt/n-PSi/ZnO NCs/Pt photovoltaic photodetectors. Optical Materials, 84 . pp. 830-842. ISSN 0925-3467

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Official URL: http://dx.doi.org/10.1016/j.optmat.2018.08.027

Abstract

The effect of the annealing temperature on the photoelectrical properties of the nanoporous silicon/zinc oxide nanocrystallites-based (Pt/n-PSi/ZnO NCs/Pt) photodetector was investigated. Different morphologies of 3D ZnO were synthesized onto the n-PSi substrates via radio frequency (RF) sputtering in the absence of a catalyst. The synthesis of ZnO NCs was controlled by varying the growth temperature between 600–700 °C and 800–900 °C. The effect of the synthesis temperature on the structural, morphological, and optical properties of the n-PSi/ZnO NCs was systematically studied using field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence spectroscopy (PL) techniques. The roughness was found to be dependent on the anodization current density. The optimal n-PSi/ZnO NCs-based metal-semiconductor-metal UV detector (MSM) was fabricated at 700 °C. The fabricated device showed a high sensitivity of 1007.14, an internal photoconductive gain of 11.07, and a responsivity of 5.99 A/W with a low dark current when illuminated with 380 nm light (1.55 mW/cm2) at +5 V bias voltage. In addition, the response and recovery times were determined to be 0.34 and 0.22 s, respectively. This approach offers a cost-effective substrate and simple synthesis method to improve the growth of the n-PSi/ZnO NCs and demonstrates the successful fabrication of nanoscale photodetectors with potential application in nano-optics devices.

Item Type:Article
Uncontrolled Keywords:RF sputtering, ZnO nanocrystallites, porous silicon, annealing temperature, photodetector
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:85955
Deposited By: Yanti Mohd Shah
Deposited On:30 Jul 2020 15:39
Last Modified:30 Jul 2020 15:39

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