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Back-to-back schottky diode from vacuum filtered and chemically reduced graphene oxide

Che Azmi, Siti Nadiah and Abd. Rahman, Shaharin Fadzli and Hashim, Abdul Manaf (2018) Back-to-back schottky diode from vacuum filtered and chemically reduced graphene oxide. Indonesian Journal of Electrical Engineering and Computer Science, 10 (3). pp. 897-904. ISSN 2502-4752

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Official URL: http://dx.doi.org/10.11591/ijeecs.v10.i3.pp897-904


This paper presents fabrication of reduced graphene oxide (rGO)/silicon (Si) back-to-back Schottky diode (BBSD) through graphene oxide (GO) thin film formation by vacuum filtration and chemical reduction of the film via ascorbic acid. In order to understand and assess the viability of these two processes, process condition and parameters were varied and analyzed. It was confirmed that the GO film thickness could be controlled by changing GO dispersion volume and concentration. Filtration of 200 ml of 0.4 ppm GO dispersion produced average film thickness of 53 nm. As for the reduction process, long duration was required to produce higher reduction degree. rGO film that underwent two times reduction at before and after transfer process with concentrated ascorbic acid gave the lowest sheet resistance of 3.58 MΩ/sq. In the final part of the paper, result of the BBSD device fabrication and current-voltage characterization were shown. The formed two rGO/Si Schottky junctions in the BBSD gave barrier height of 0.63 and 0.7 eV. The presented results confirmed the viability of fabricating rGO-based device using a simple method and without requirement of sophisticated equipment.

Item Type:Article
Uncontrolled Keywords:Back-to-Back Schottky Diode, Vacuum filtration
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:85882
Deposited By: Widya Wahid
Deposited On:30 Jul 2020 15:38
Last Modified:30 Jul 2020 15:38

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