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High-performance nanoporous silicon-based photodetectors

Thahe, Asad A. and Bakhtiar, Hazri and Bidin, Noriah and Hassan, Ziad and Qaeed, M. A. and Ramizy, Asmiet and Talib, Zainal Abidin and Ahmed, Naser M. and Omar, Khalid and Alqaraghuli, Hasan and Husham, Mohammed and Allam, Nageh K. (2018) High-performance nanoporous silicon-based photodetectors. Optik, 168 . pp. 424-431. ISSN 0030-4026

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Official URL: http://dx.doi.org/10.1016/j.ijleo.2018.04.084


A series of porous silicon (PSi) samples was prepared using photoelectrochemical etching (PECE) method with optimum current density of 45 mA/cm2. The as-prepared PSi samples were characterized to determine the influence of the etching time (15, 25 and 30 min) on their morphology and electrical properties. The percentage of porosity was estimated via gravimetric analysis. The band gap of the fabricated PSi was ≈2.22 eV. Upon their use to fabricate metal-semiconductor-metal (MSM) ultraviolet photodetectors (UVPD), the fabricated PSi revealed excellent stability and reliability under repetitive shots at 530 nm. Furthermore, very fast rise time (≈0.28 s) was obtained at a bias of 1 V under visible light (530 nm) illumination.

Item Type:Article
Uncontrolled Keywords:Etching time, Photodetector
Subjects:Q Science > QC Physics
ID Code:85116
Deposited By: Widya Wahid
Deposited On:29 Feb 2020 13:43
Last Modified:29 Feb 2020 13:43

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