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Single electron transistor scheme based on multiple quantum dot Islands: carbon nanotube and fullerene

Khademhosseini, Vahideh and Dideban, Daryoosh and Ahmadi, Mohammad Taghi and Ismail, Razali and Heidari, Hadi (2018) Single electron transistor scheme based on multiple quantum dot Islands: carbon nanotube and fullerene. ECS Journal of Solid State Science and Technology, 7 (10). M145-M152. ISSN 2162-8769

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Official URL: http://dx.doi.org/10.1149/2.0081810jss

Abstract

Single electron transistor (SET) is a nano dimension device that is offered by technology to solve the problem of aggressive scaling in traditional transistors. Its operation speed depends on carrier mobility of its quantum dot. In this research, fullerene (C60) and carbon nanotube (CNT) are utilized as materials of quantum dots in SET. Two SETs with different multiple quantum dots as C60-CNT-C60 and CNT-C60-CNT are modeled and analyzed. The comparison study shows that total length of quantum dots as fullerene diameter and CNT length have indirect effect on its current. Moreover increasing temperature decreases its current while rising of the gate voltage increases its current. In other words, quantum dot length, temperature and gate voltage are parameters which can control SET operation. Furthermore two SETs are simulated and their stability diagrams are analyzed. The simulation results show that C60-CNT-C60 SET has lower coulomb blockade and also it has more reliability and faster operation than CNT-C60-CNT SET.

Item Type:Article
Uncontrolled Keywords:aggressive scaling, comparison study, fullerenes (C60), increasing temperatures, indirect effects
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:84455
Deposited By: Yanti Mohd Shah
Deposited On:11 Jan 2020 15:08
Last Modified:11 Jan 2020 15:08

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