Alias, Nurul Ezaila and Bahrudin, Muhammad Faris (2018) Gate-all-around floating gate (gaa-fg) with variable oxide thickness for nonvolatile memory. In: Proceedings of 2018 Electrical Engineering Symposium (EES2018), 2018.
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Item Type: | Conference or Workshop Item (Paper) |
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Divisions: | Electrical Engineering |
ID Code: | 83570 |
Deposited By: | Narimah Nawil |
Deposited On: | 30 Sep 2019 13:32 |
Last Modified: | 23 Oct 2019 03:17 |
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