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Modelling of nanoscale MOSFET performance in the velocity saturation region

Tan, Micheal Loong Peng and Ismail, Razali (2007) Modelling of nanoscale MOSFET performance in the velocity saturation region. Elektrika, 9 (1). pp. 37-41. ISSN 0128-4428

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Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a function of the above parameters. A simplified threshold voltage formulation is developed to provide similar accuracy when compared to actual devices. The models show good agreement with the experimental data over a wide range of gate and drain bias for 90nm process technology.

Item Type:Article
Uncontrolled Keywords:current-voltage, drain source resistance, MOSFET, threshold voltage, velocity saturation
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:8071
Deposited By: Norshiela Buyamin
Deposited On:25 Mar 2009 07:14
Last Modified:02 Dec 2013 07:56

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