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Thermoluminescence properties of Yb–Tb-Doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation

Hossain, I. and Wagiran, H. and Sahini, M. H. (2017) Thermoluminescence properties of Yb–Tb-Doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation. Journal of Applied Spectroscopy, 84 (1). pp. 144-147. ISSN 0021-9037

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Abstract

A thermoluminescence (TL) analysis was carried out to study the sensitivity and dose responses of Yb–Tb-doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation. The results are compared with the commercially available standard LiF:Mg, Ti (TLD-100) chip. The Yb–Tb-doped SiO2 optical fiber and TLD-100 chips were placed inside Perspex and irradiated with 1.25 MeV gamma photons with doses ranging from 1.0 to 10.00 Gy. The results clearly show the superiority of TLD-100 chips in terms of response and sensitivity. The sensitivity of Yb–Tb-doped optical fiber and TLD-100 chips is 45.25 and 768.85 nc/(mg × Gy) respectively.

Item Type:Article
Uncontrolled Keywords:optical fiber, thermoluminescence
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:76429
Deposited By: Fazli Masari
Deposited On:30 Apr 2018 21:21
Last Modified:30 Apr 2018 21:21

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