Parimon, Norfarariyanti and Mohd. Yusof, Siti Suhaila and Hashim, Abdul Manaf (2008) Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device. In: Proceedings - 2nd Asia International Conference on Modelling and Simulation, AMS 2008, 13-15 May 2008.
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Official URL: http://dx.doi.org/10.1109/AMS.2008.187
Abstract
The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT structure was carried out. From the simulated results, it was found that the operating frequency of the Schottky diode is tunable based on the length ofcoplanar waveguide.
Item Type: | Conference or Workshop Item (Paper) |
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Uncontrolled Keywords: | HEMT structure, IQ chip, rectenna, schottky diode |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Divisions: | Electrical Engineering |
ID Code: | 7620 |
Deposited By: | Maznira Sylvia Azra Mansor |
Deposited On: | 13 Jan 2009 00:33 |
Last Modified: | 09 Oct 2017 07:35 |
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