Li, M. and Abu-Rub, H. and Liu, Y. and Ge, B. and Salam, Z. (2016) SiC power devices and applications in quasi-Z-source converters/inverters. In: 2nd IEEE Conference on Energy Conversion, CENCON 2015, 19 - 20 Okt 2015, Johor Bahru, Malaysia.
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Abstract
The wide band-gap Silicon Carbide (SiC) material made power semiconductor devices have attracted increasing attentions in modern power electronics applications. They are able to not only provide wonderful performance of higher switching frequency, higher power, higher voltages, and higher junction temperature than silicon power devices, but also introduce significant decrease in the system volume and weight, and provide high reliability and high efficiency to power electronic systems. In this paper, a review of SiC devices in terms of characteristics, development, and applications are presented. And the SiC power device based quasi-Z-Source matrix converter and inverter are compared with the Silicon-IGBT based ones, respectively, demonstrating a competitive solution for the future development of such converters/inverters.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | impedance source, inverter, matrix converter, power loss, Silicon carbide |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 73423 |
| Deposited By: | Mohd Zulaihi Zainudin |
| Deposited On: | 23 Nov 2017 01:37 |
| Last Modified: | 23 Nov 2017 01:37 |
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