Hamzah, A. and Johari, Z. and Ismail, R. (2016) A charge-based compact modeling of cylindrical surrounding-floating gate MOSFET (S-FGMOSFET) for memory cell application. In: 12th IEEE International Conference on Semiconductor Electronics, ICSE 2016, 17 August 2016 through 19 August 2016, Kuala Lumpur; Malaysia.
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Abstract
A charge-based compact model of the long-channel cylindrical surrounding-floating gate (S-FG) MOSFETs for memory cell application is presented. The compact model is based on an accurate extraction of floating gate potential using charge balance model and solving the mobile charge density at the source and drain ends using the unified charge control model (UCCM). The drain-current relation is obtained from Pao-Sah's dual integral, which is expressed as a function of inversion charge at the source and drain end. The compact model for the floating gate potential and its transfer characteristics have been extensively verified with numerical simulations at various bias potentials and floating gate charges in all operating regions.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | 3D Vertical FG, DC behavior, Device Modeling, S-FGMOSFET, SRGMOSFET, UCCM |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 73079 |
| Deposited By: | Muhammad Atiff Mahussain |
| Deposited On: | 23 Nov 2017 04:17 |
| Last Modified: | 23 Nov 2017 04:17 |
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