Kaur, J. and Kuwano, N. and Jamaludin, K. R. and Mitsuhara, M. and Saito, H. and Hata, S. and Suzuki, S. and Miyake, H. and Hiramatsu, K. and Fukuyama, H. (2016) Electron microscopy analysis of microstructure of postannealed aluminum nitride template. Applied Physics Express, 9 (6). ISSN 1882-0778
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Abstract
The microstructure of an AlN template after high-temperature annealing was investigated by transmission electron microscopy (TEM). The AlN template was prepared by depositing an AlN layer of about 200nm thickness on a sapphire (0001) substrate by metal-organic vapor phase epitaxy. The AlN template was annealed under (N2 + CO) atmosphere at 1500-1650 °C. TEM characterization was conducted to investigate the microstructural evolution, revealing that the postannealed AlN has a two-layer structure, the upper and lower layers of which exhibit Al and N polarities, respectively. It has been confirmed that postannealing is an effective treatment for controlling the microstructure.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Electron microscopy, High resolution transmission electron microscopy, Metallorganic vapor phase epitaxy, Microstructure, Organometallics, Sapphire, Transmission electron microscopy, After high temperature, AlN layers, Electron microscopy analysis, Metal-organic vapor phase epitaxy, Post annealing, TEM characterization, Two-layer structures, Aluminum nitride |
| Subjects: | T Technology > T Technology (General) |
| Divisions: | Malaysia-Japan International Institute of Technology |
| ID Code: | 71617 |
| Deposited By: | Widya Wahid |
| Deposited On: | 20 Nov 2017 08:28 |
| Last Modified: | 20 Nov 2017 08:28 |
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