Universiti Teknologi Malaysia Institutional Repository

Effect of etching time on optical and morphological features of N-type porous silicon prepared by photo-electrochemical method

Thahe, Asad A. and Bidin, Noriah and Al-Azawi, Mohammed A. and Ahmed, Naser M. (2016) Effect of etching time on optical and morphological features of N-type porous silicon prepared by photo-electrochemical method. Jurnal Teknologi, 78 (3). pp. 57-60. ISSN 0127-9696

[img]
Preview
PDF
343kB

Official URL: http://dx.doi.org/10.11113/jt.v78.7465

Abstract

Achieving efficient visible photoluminescence from porous-silicon (PSi) is demanding for optoelectronic and solar cells applications. Improving the absorption and emission features of PSi is challenging. Photo-electro-chemical etching assisted formation of PSi layers on n-type (111) silicon (Si) wafers is reported. Samples are prepared at constant current density (~30 mA/cm2) under varying etching times of 10, 15, 20, 25, and 30 min. The influence of etching time duration on the growth morphology and spectral properties are inspected. Room temperature photoluminescence (PL) measurement is performed to determine the optical properties of as-synthesized samples. Sample morphologies are imaged via Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The thickness and porosity of the prepared samples are estimated using the gravimetric method. The emission and absorption data is further used to determine the samples band gap and electronic structure properties. Results and analyzed, interpreted with different mechanisms and compared.

Item Type:Article
Uncontrolled Keywords:porous silicon, spectral response
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:69274
Deposited By: Siti Nor Hashidah Zakaria
Deposited On:22 Nov 2017 08:45
Last Modified:22 Nov 2017 08:45

Repository Staff Only: item control page