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Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire

Miyake, Hideto and Nishio, Gou and Suzuki, Shuhei and Hiramatsu, Kazumasa and Fukuyama, Hiroyuki and Kaur, Jesbains and Kuwano, Noriyuki (2016) Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire. Applied Physics Express, 9 (2). pp. 1-4.

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Official URL: http://iopscience.iop.org/article/10.7567/APEX.9.0...

Abstract

The annealing of an AlN buffer layer in a carbon-saturated N2–CO gas on a sapphire substrate was investigated. The crystal quality of the buffer layer was significantly improved by annealing at 1650–1700 °C. An AlN buffer layer with a thickness of 300 nm was grown by metalorganic vapor phase epitaxy (MOVPE), and was annealed at 1700 °C for 1 h. We fabricated a 2-µm-thick AlN layer on the annealed AlN buffer layer by MOVPE. The full widths at half maximum of the (0002)- and ($10\bar{1}2$)-plane X-ray rocking curves were 16 and 154 arcsec, respectively, and the threading dislocation density was 4.7 × 108 cm−2.

Item Type:Article
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:68841
Deposited By: Haliza Zainal
Deposited On:13 Nov 2017 08:28
Last Modified:14 Nov 2017 14:23

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