Muhammad, R. and Wahab, Y. and Ibrahim, Zuhairi and Othaman, Zulkafli and Sakrani, S. and Ahamad, R. (2013) The effect of V/III ratio on the crystal structure of gallium arsenide nanowires. In: 4th International Conference on Solid State Science and Technology, ICSSST 2012, 18-20 Dec, 2013, Melaka, Malaysia.
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Official URL: http://dx.doi.org/10.4028/www.scientific.net/AMR.8...
Abstract
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-assisted using metal-organic chemical vapour deposition. Transmission electron microscopy and X-Ray diffraction analysis were carried out to investigate the effects of V/III ratio and nanowire diameter on structural properties and crystallinity changes. Results show that GaAs nanowires grow preferably in the wurtzite crystal structure than zinc blende structure with increasing V/III ratio. Additionally, XRD studies have revealed that wurtzite nanowires show prominent peaks especially at (222) orientation. The optimum V/III ratio was found to be 166 with less defect structure, uniform diameter and peak prominence. The nanowires with high quality are needed in solar cells technology for energy trapping with maximum capacity.Keywords : Nanowire; crystal structure; Gallium arsenide; Vapor Liquid Solid
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | gallium arsenide, nanowire |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Sustainability Research Alliance |
| ID Code: | 68555 |
| Deposited By: | Fazli Masari |
| Deposited On: | 11 Jul 2017 07:35 |
| Last Modified: | 11 Jul 2017 07:35 |
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