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Effect of methane flow rate to SiC thin films morphology deposited by VHF-PECVD

Albert Alim, Emilly and Ismail, Abd. Khamim and Omar, Muhammad Firdaus (2016) Effect of methane flow rate to SiC thin films morphology deposited by VHF-PECVD. In: International Conference of The Advancement of Materials and Nanotechnology IV 2016, 09-11 Nov, 2016, Langkawi, Kedah, Malaysia.

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Official URL: http://conference.city/conference.php?e_id=117596


Silicon carbide (SiC) thin films have been grown in a very high frequency-plasma enhanced chemical vapour deposition (VHF-PECVD) system designed and developed in our laboratory. Silane (SiH4) and methane (CH4) were used as precursor gases. The effect of methane flow rate on the structural and morphology of the deposited SiC thin films were investigated. Raman spectroscopy revealed that the existence of crystal structure in the deposited films with SiC (TO) peak shifted towards lower wavenumbers as CH4 flow rate is increased. The deposition rate of SiC thin films is found to be higher than 13 nm/min. At CH4 flow rate, the deposited films transform from layer-island to layer-layer mechanisms when CH4 flow rate was increased.

Item Type:Conference or Workshop Item (Paper)
Additional Information:RADIS System Ref No:PB/2016/09986
Uncontrolled Keywords:methane, silicon carbide
Subjects:Q Science
ID Code:67080
Deposited By: Siti Nor Hashidah Zakaria
Deposited On:25 Aug 2017 14:31
Last Modified:25 Aug 2017 14:31

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