Khoo, Wei How and Mohamed Sultan, Suhana and Sahdan, M. Z. (2016) The effects of gas flow rate and annealing on the morphological properties of zinc oxide nanostructures thin film using chemical vapour deposition process. In: Regional Annual Fundamental Science Symposium, 18-20 May, 2016, Kuala Lumpur, Malaysia.
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Official URL: http://www.mjfas.utm.my/index.php/mjfas/article/vi...
Abstract
Zinc Oxide nanostructures thin films have been deposited on glass substrates by using chemical vapour deposition technique at 1000°C assisted by gas blocker. Glass substrates was sputtered by ~5nm of gold to form a catalyst layer on top of glass. Different gas flow rates of 0.05, 0.10, 0.20, 0.40 L/min were used in the deposition. After the deposition, the layer was annealed at temperatures of 500°C for 1 hours under atmospheric pressure. The surface morphologies of ZnO thin film were investigated field emission scanning electron microscope (FESEM). X-ray diffraction (XRD) results confirm the presence of ZnO layer with high peak of (002) crystal orientation and shows improvement after annealing. The mechanism of ZnO nanostructures formation will be discussed in this paper.
Item Type: | Conference or Workshop Item (Paper) |
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Additional Information: | RADIS System Ref No:PB/2016/08044 |
Uncontrolled Keywords: | gas flow rate, annealing |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Divisions: | Advanced Informatics School |
ID Code: | 67049 |
Deposited By: | Siti Nor Hashidah Zakaria |
Deposited On: | 25 Aug 2017 06:19 |
Last Modified: | 25 Aug 2017 06:19 |
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