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Bismuth (III) Telluride (Bi2Te3) embedded in PVA as a passive saturable absorber in a 2 micron region

Ahmad, Fauzan and Ibrahim, Mohd. Haniff and Sulaiman, Wadi Harun and Zuikafly, Siti Nur Fatin and Muhamad Apandi, Nur Hidayah (2016) Bismuth (III) Telluride (Bi2Te3) embedded in PVA as a passive saturable absorber in a 2 micron region. Photonics Letters of Poland, 8 (4). pp. 101-103. ISSN 2080-2242

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Official URL: http://dx.doi.org/10.4302/plp.2016.4.04

Abstract

We demonstrate a passive Q-switched at 2 um region by integrating Bismuth (III) Telluride (Bi2/Te3) embedded in Polyvinyl Alcohol (PVA). Bi2Te3 was embedded in PVA by solution casting approach to develop a Bi2/Te3-PVA film and integrated in the laser cavity with ring configuration to generate pulse laser. The experimental works show that the proposed passive saturable absorber operates at input pump power ranges from 637 mW to 784 mW with central wavelength of 1957.6 nm. We observed the tunable repetition rate from 12.6 kHz to 26.1 kHz with the shortest pulse width of 2.22 us. The laser produces maximum instantaneous output peak power and pulse energy of 0.42 W and 0.94 uJ, respectively.

Item Type:Article
Additional Information:RADIS System Ref No:PB/2017/11167
Subjects:T Technology
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Advanced Informatics School
Malaysia-Japan International Institute of Technology
ID Code:66882
Deposited By: Siti Nor Hashidah Zakaria
Deposited On:06 Jul 2017 06:18
Last Modified:20 Nov 2017 08:52

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