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Self-assembled Ge/Si nanoislands: effect of argon flow and radio frequency power

Othaman, Zulkafli and Ghoshal, Sib Krishna and Ahmadi, Fahimeh and Samavati, Alireza (2014) Self-assembled Ge/Si nanoislands: effect of argon flow and radio frequency power. Physica Scripta, 89 (2). ISSN 0031-8949

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Official URL: http://dx.doi.org/10.1088/0031-8949/89/02/025804

Abstract

The growth of a germanium-silicon (Ge/Si) heterostructure using radio frequency (rf) magnetron sputtering under optimized conditions is performed. High-density self-assembled Ge nanoislands ∼14 nm in size are obtained directly on Si(100) under 10 sccm argon (Ar) flow and 100 W rf power. The surface roughness and number density of nanoislands revealed by atomic force microscopy are found to be in the range of 3.7-0.6 nm and 45 × 10 2-20 × 102 μm-2, respectively. An increase in Ar flow and rf power leads to an enhancement of defects, anti-sputtering of the deposited islands and a decrease in the sample quality. X-ray diffraction is used to measure the strain, which is found to be close to the lattice misfit of Ge and Si. It shows the carefully controlled growth condition with minimum density of dislocation. Room temperature photoluminescence exhibits a very strong blue-violet peak at 3.2 eV, which is attributed to the transition from excited triplet level to grand-state singlet level.

Item Type:Article
Uncontrolled Keywords:photoluminescence, x-ray diffraction
Subjects:Q Science
Divisions:Science
ID Code:62548
Deposited By: Widya Wahid
Deposited On:18 Jun 2017 14:13
Last Modified:18 Jun 2017 14:13

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