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Influence of substrate orientation on the structural properties nanowires in MOCVD

Muhammad, R. and Othaman, Z. and Wahab, Y. and Ibrahim, Zuhairi and Sakrani, S. (2015) Influence of substrate orientation on the structural properties nanowires in MOCVD. In: The 3rd International Conference on Advanced Materials Science and Technology (ICAMST 2015), 6-7 Oct, 2015, Indonesia.

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Official URL: https://searchworks.stanford.edu/view/11663867

Abstract

In this study, the effect of substrate orientation on the structural properties of GaAs nanowires grown by a metal organic chemical vapor deposition has been investigated. Gold colloids were used as catalyst to initiate the growth of nanowires by the vapour-liquid-solid (VLS) mechanism. From the field-emission scanning electron microscopy (FESEM), the growth of the nanowires were at an elevation angle of 90o, 60o, 65o and 35o with respect to the GaAs substrate for (111)B, (311)B, (110) and (100) orientations respectively. The preferential NW growth direction is always <111>B. High-resolution transmission electron microscope (HRTEM) micrograph showed the NWs that grew on the GaAs(111)B has more structural defects when compared to others. Energy dispersive X-ray analysis (EDX) indicated the presence of Au, Ga and As. The bigger diameter NWs dominates the (111)B substrate surface.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:gaAs nanowires grown, vapour-liquid-solid (VLS)
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:62127
Deposited By: Fazli Masari
Deposited On:30 May 2017 08:43
Last Modified:14 Aug 2017 09:37

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