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Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS)

Saad, I. and Seng, B. and Hamzah, Z. and Bolong, N. and Anuar, K. and Ghosh, B. and Ismail, R. (2015) Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS). Proceeding - 2013 IEEE Student Conference on Research and Development, SCOReD 2013 . pp. 275-280.

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Item Type:Article
Subjects:A General Works
ID Code:59410
Deposited By: Haliza Zainal
Deposited On:18 Jan 2017 09:50
Last Modified:19 Jan 2017 13:48

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