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Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with ∆(so) > E-g

Chai, Grace M. T. and Broderick, Christopher A. and O'Reilly, Eoin P. O. and Othaman, Zulkafli and Jin, Shirong and Petropoulos, J. P. and Zhong, Yujun and Dongmo, Pernell B. and Zide, Joshua M. O. and Sweeney, Stephen J. and Hosea, Thomas Jeff Cockburn (2015) Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with ∆(so) > E-g. Semiconductor Science and Technology, 30 (9). ISSN 0268-1242

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Official URL: http://dx.doi.org/10.1088/0268-1242/30/9/094015


Temperature dependent photo-modulated reflectance is used to measure the band gap Eg and spin-orbit splitting energy ∆so in dilute-Bi In0.53Ga0.47As1-xBix/InP for 1.2% = x = 5.8%. At room temperature, Eg decreases with increasing Bi from 0.65 to 0.47 eV (~2.6 µm), while ∆so increases from 0.42 to 0.62 eV, leading to a crossover between Eg and ∆so around 3.8% Bi. The 5.8% Bi sample is the first example of this alloy where ∆so > Eg has been confirmed at all temperatures. The condition ∆so > Eg is important for suppressing hot-hole-producing non-radiative Auger recombination and inter-valence band absorption losses and so holds promise for the development of mid-infra-red devices based on this material system. The measured variations of Eg and ∆so as a function of Bi content at 300 K are compared to those calculated using a 12-band k.p Hamiltonian which includes valence band anti-crossing effects. The Eg results as a function of temperature are fitted with the Bose-Einstein model. We also look for evidence to support the prediction that Eg in dilute bismides may show a reduced temperature sensitivity, but find no clear indication of that.

Item Type:Article
Uncontrolled Keywords:photomodulated reflectance, spinorbit splitting, valence band anti-crossing
Subjects:Q Science > QC Physics
ID Code:55151
Deposited By: Fazli Masari
Deposited On:11 Aug 2016 09:49
Last Modified:15 Feb 2017 07:41

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