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200 °C annealed combinatorially deposited chalcogenide based metallic thin films for photovoltaics

Ali, Nisar and Ahmed, Rashid and Ul Haq, Bakhtiar and Shaari, Amiruddin and Jabeen, Musarrat (2015) 200 °C annealed combinatorially deposited chalcogenide based metallic thin films for photovoltaics. Measurement: Journal of the International Measurement Confederation, 63 . pp. 81-86. ISSN 0263-2241

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Abstract

Thin film library of tin antimony sulphide was synthesized via combinatorial thermal deposition technique on soda lime silica glass slides by two source methods. Two baffles were used for controlling the combinatorial growth. The combinatorial library was annealed in argon atmosphere inside glass ampoules at 200 °C. From the XRD spectra, the polycrystalline structure was confirmed according to JCPDS file number 34-0610. Photoconductivity response of the films was measured via photoconductivity spectrometer. The library have no transmittance lower than 720 nm. The band gap lies in the range of 1.38–2.8 eV. The thickness of the film is 15,000 Å measured by quartz crystal monitor.

Item Type:Article
Uncontrolled Keywords:thin films
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:54928
Deposited By: Haliza Zainal
Deposited On:03 Aug 2016 09:52
Last Modified:30 Jul 2017 15:49

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