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Fabrication and characterization of stacked self-assembled In0.5Ga0.5As/GaAs quantum dots grown by MOCVD

Aryanto, Didik and Othaman, Zulkafli and Ismail, A. Khamim (2014) Fabrication and characterization of stacked self-assembled In0.5Ga0.5As/GaAs quantum dots grown by MOCVD. Advanced Materials Research, 896 . pp. 215-218. ISSN 1022-6680

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Official URL: https://dx.doi.org/10.4028/www.scientific.net/AMR....

Abstract

Stacked self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) were grown using metal organic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HR-XDR) show the effects of stacking on morphology and structure of QDs. Strains due to the buried QDs affect the shape and alignment of the successive layers. Capping of these QDs also determine the quality of the top most QDs structure.

Item Type:Article
Uncontrolled Keywords:AFM, high resolution x-Ray diffraction (HR-XRD), quantum dot (QD), TEM
Subjects:Q Science
Divisions:Science
ID Code:52842
Deposited By: Siti Nor Hashidah Zakaria
Deposited On:01 Feb 2016 11:54
Last Modified:04 Jul 2018 19:52

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