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Synthesis and characterization of InGaAS nanowires grown by MOCVD

Gustiono, D. and Wibowo, E. and Othaman, Z. (2013) Synthesis and characterization of InGaAS nanowires grown by MOCVD. In: 2013 International Conference On Science & Engineering In Mathematics, Chemistry And Physics (SCIETECH 2013).

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Official URL: http://iopscience.iop.org/article/10.1088/1742-659...

Abstract

Semiconductor nanowires have been intensively investigated in order to study their unique fundamental and application properties that develop at the nano-scale. One of main problems in the growth of III-V semiconductor nanowire is uniformity both of in dimension and composition of chemical elements. We synthesized InGaAs nanowire on GaAs (111) substrate at 400 °C – 480 °C temperatures for 30 minutes using MOCVD. The nanowires grow perpendicular to the substrate via direct impinging mechanism and they have hexagonal shape with diameter of 80-150 nm. Dimension of nanowire, length and diameter, increase with increases of growth temperature. Formations of tapering could be controlled with growth at lower temperature.

Item Type:Conference or Workshop Item (Paper)
Additional Information:Journal of Physics: Conference Series 423 (2013)
Uncontrolled Keywords:semiconductor, inGaAs nanowire
Subjects:Q Science
Divisions:Science
ID Code:51336
Deposited By: Haliza Zainal
Deposited On:27 Jan 2016 09:53
Last Modified:04 Sep 2017 22:12

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