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Aluminium-induced crystallization of silicon thin film by excimer laser annealing

Ab. Razak, Siti Noraiza and Bidin, Noriah (2013) Aluminium-induced crystallization of silicon thin film by excimer laser annealing. Sains Malaysiana, 42 (2). pp. 219-222. ISSN 0126-6039

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Polycrystalline silicon (poly-Si) film was fabricated by indirect process of re-crystallization of amorphous silicon (a-Si) thin film. This enhancement process is important to determine the performance of silicon thin film (STF). In this attempt, a fundamental study was carried out to enhance the crystallization of aluminium doped silicon thin film. An a-Si thin film was prepared by low pressure physical vapour deposition (PVD) and doped with 10% aluminium. The aluminium-induced crystallization (AIC) process was carried out in two sequence steps. Firstly, the amorphous film was annealed by using conventional heat treatment at operating temperature of 350°C. Secondly, the poly-Si underwent excimer laser anneling (ELA). The micro structure of thin film was analyzed using atomic force microscope (AFM). The results showed that, the grain size of the a-Si film is increased with the energy density of the excimer laser. The optimum grain size obtained is 129 nm corresponding to energy density of 356 mJ cm2

Item Type:Article
Uncontrolled Keywords:aluminium, amorphous silicon lateral growth, crystallization, excimer laser annealing
Subjects:Q Science
ID Code:49013
Deposited By: Siti Nor Hashidah Zakaria
Deposited On:02 Dec 2015 10:09
Last Modified:21 Oct 2018 12:33

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