Universiti Teknologi Malaysia Institutional Repository

Growth of Ge/Si(100) nanostructures by radio-frequency magnetron sputtering: the role of annealing temperature

Alireza, S. and Ghoshal, S. K. and Othaman, Z. (2012) Growth of Ge/Si(100) nanostructures by radio-frequency magnetron sputtering: the role of annealing temperature. Chinese Physics Letters, 29 (4). ISSN 1741-3540

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Official URL: http://iopscience.iop.org/article/10.1088/0256-307...

Abstract

Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600°C, 700°C and 800°C for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ∼0.29 eV in the PL peak is observed with increasing annealing temperature.

Item Type:Article
Uncontrolled Keywords:Nanocrystals, Germanium nanocrystals
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:47040
Deposited By: Fazli Masari
Deposited On:22 Jun 2015 13:56
Last Modified:21 Oct 2018 12:33

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