Idrees, Fatima Aldaw and Sakrani, Samsudi and Othaman, Zulkafli (2011) Formation and characterization of silicon self-assembled nanodots. Enabling Science and Nanotechnology, 1341 . pp. 324-327. ISSN 0262-8104
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Abstract
One of the most important fields in semiconductor physics is study the nanostructure of materials with dimensions less than 2-like quantum dots —QD. Si quantum dot is one of typical material used in nanostructure, because of their unique and useful functions caused from quantized electron energy state. Although various formation techniques have been developed so far to achieve high-density and nanometer-size. In general silicon QDs can be formed on non-crystalline substrates, such as glass. Si quantum dots have been successfully grown on corning glass (7059) substrate. This nucleation starts to appear at first 7 min of QDs growth formation until stable conditions of the dots. The measurement results estimated average dots size to be 53 nm is confirmed by using AFM.
Item Type: | Article |
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Uncontrolled Keywords: | silicon self-assembled nanodots |
Subjects: | Q Science > QD Chemistry |
Divisions: | Science |
ID Code: | 44932 |
Deposited By: | Haliza Zainal |
Deposited On: | 21 Apr 2015 03:31 |
Last Modified: | 18 Sep 2017 03:50 |
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